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1. general description the tja1081b is a flexray node transceiver that is fully compliant with the flexray electrical physical layer specification v3.0.1 (see ref. 1 ). in order to meet the jaspar-specific requirements, it implements the ? bus driver increased voltage amplitude transmitter? functional class. it is prim arily intended for commu nication systems from 2.5 mbit/s to 10 mbit/s and provides an advanced interface be tween the protocol controller and the physical bus in a flexray network. the tja1081b features enhanced low-powe r modes, optimized for ecus that are permanently connected to the battery. the tja1081b provides differ ential transmit capability to the network and differential receive capability to the flexra y controller. it offers excelle nt emc performance as well as effective esd protection. the tja1081b actively monitors system pe rformance using dedicated error and status information (that can be read by any microcontroller), along with internal voltage and temperature monitoring. the tja1081b supports mode control as used in the tja1080a (see ref. 3 ) and is fully function and footprint compatible with the tja1081 (see ref. 2 ). 2. features and benefits 2.1 optimized for time trig gered communication systems ? compliant with flexray electrical physical layer specification v 3.0.1 (see ref. 1 ) ? meets jaspar requirements asdescribedin the ? busdriverincreasedvoltage amplitudetransmitter ? functionalclass ? automotive product qualificatio n in accordance with aec-q100 ? data transfer rates from 2.5 mbit/s to 10 mbit/s ? supports 60 ns minimum bit time at 400 mv differential input voltage ? very low electromagnetic emissions (eme) to support unshielded cable, meeting latest industry standards ? differential receiver with wide common-mode range for high electromagnetic immunity (emi), meeting latest industry standards ? auto i/o level adaptation to host controller supply voltage v io ? can be used in 14 v, 24 v and 48 v powered systems ? instant transmitter shut-dow n interface (via bge pin) ? independent power supply ramp-up for v bat , v cc and v io tja1081b flexray node transceiver rev. 1 ? 4 june 2012 product data sheet
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 2 of 45 nxp semiconductors tja1081b flexray node transceiver 2.2 low-power management ? low-power management including inhibit switch ? very low current in sleep and standby modes ? v bat operating range: 4.75 v to 60 v ? gap-free specification ? local and remote wake-up ? supports remote wake-up via dedicated data frames ? wake-up source recognition 2.3 diagnosis (detection and signaling) ? enhanced supply monitoring of v bat , v cc and v io ? overtemperature detection ? short-circuit detection on bus lines ? v bat power-on flag (first battery connection and cold start) ? clamping diagnosis on pin txen ? bge status feedback 2.4 protection ? bus pins protected against ? 6 kv esd pulses according to iec61000-4-2 and hbm ? pins v bat and wake protected against ? 6 kv esd pulses according to iec61000-4-2 ? bus pins protected against transients in automotive environment (according to iso 7637 class c) ? bus pins short-circuit proof to battery voltage (14 v, 24 v and 48 v) and ground ? fail-silent behavior in the event of an undervoltage on pins v bat , v cc or v io ? passive behavior of bus lines while the transceiver is not powered ? no reverse currents from the digital input pins to v io or v cc when the transceiver is not powered 2.5 functional classes according to flexray electrical physical layer specification (see ref. 1 ) ? bus driver voltage regulator control ? bus driver - bus guardian interface ? bus driver logic level adaptation ? bus driver remote wake-up ? jxo\kx increased voltage amplitude transmitter (jaspar) 3. ordering information table 1. ordering information type number package name description version TJA1081BTS ssop16 ssop16: plastic shrink small outli ne package; 16 leads; body width 5.3 mm sot338-1
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 3 of 45 nxp semiconductors tja1081b flexray node transceiver 4. block diagram fig 1. block diagram v io v bat inh signal router trans- mitter bus failure detection normal receiver input voltage adaptation output voltage adaptation state machine 015aaa263 tja1081b v cc v io bp bm txd rxd rxdint rxdint v bat errn rxen wake-up detection oscillator undervoltage detection wake over- temperature detection low- power receiver txen bge stbn en 316 11 4 6 10 15 1 14 9 12 13 gnd 5 7 8 2
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 4 of 45 nxp semiconductors tja1081b flexray node transceiver 5. pinning information 5.1 pinning 5.2 pin description fig 2. pin configuration tja1081b inh v cc en bp v io bm txd gnd txen wake rxd v bat bge errn stbn rxen 015aaa264 1 2 3 4 5 6 7 8 10 9 12 11 14 13 16 15 table 2. pin description symbol pin type description inh 1 o inhibit output for switch ing external voltage regulator en 2 i enable input; enabled when high; internal pull-down v io 3 p supply voltage for v io voltage level adaptation txd 4 i transmit data input; internal pull-down txen 5 i transmitter enable input; when high transmitter disabled; internal pull-up rxd 6 o receive data output bge 7 i bus guardian enable input; when low transmitter disabled; internal pull-down stbn 8 i standby input; low-power mode when low; internal pull-down rxen 9 o receive data enable output; when low bus activity detected errn 10 o error diagnoses output; when low error detected v bat 11 p battery supply voltage wake 12 i local wake-up input; internal pull-up or pull-down (depends on voltage at pin wake) gnd 13 p ground bm 14 i/o bus line minus bp 15 i/o bus line plus v cc 16 p supply voltage (+5 v)
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 5 of 45 nxp semiconductors tja1081b flexray node transceiver 6. functional description the block diagram of the transceiver is shown in figure 1 . 6.1 operating modes the tja1081b supports the following operating modes: ? normal (normal-power mode) ? receive-only (nor mal-power mode) ? standby (low-power mode) ? go-to-sleep (low-power mode) ? sleep (low-power mode) ? poweroff 6.1.1 bus activity and idle detection the following mechanisms for activity and idle detection are valid in normal-power modes: ? if the absolute differential voltage on the bus lines is higher than ? v i(dif)det(act) ? for t det(act)(bus) , activity is detected on the bus lines ; pin rxen is switched low, releasing pin rxd: ? if, after activity has been detected on the bus, the differential voltage on the bus lines is lower than v il(dif) , pin rxd will go low ? if, after activity has been detected on the bus, the differential voltage on the bus lines is higher than v ih(dif) , pin rxd will go high ? if the absolute differential voltage on the bus lines is lower than ? v i(dif)det(act) ? for t det(idle)(bus) , idle is detected on the bus lines; pin rxen is switched high, blocking pin rxd (pin rxd is switched high or remains high)
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 6 of 45 nxp semiconductors tja1081b flexray node transceiver 6.1.2 signaling on pin errn pin errn provides either error information or wake-up information. the behavior of errn is determined by the host (via pins stbn and en) and not by the operating mode. if stbn is low, pin errn is configured to signal a wake-up event; when stbn and en are both high, pin errn is configured to pr ovide an error alert. sig naling on pin errn is described in table 3 . if pin errn goes low in standby or sleep mo de to signal a wake-up event, the host can switch the tja1081b to receive only mode (stbn ? h ) to determine if the wake-up is local or remote. a low level on errn in rece ive only mode (provided the transition to receive only mode was not triggered by en going low) indicates a remote wake-up was detected; a high signals a local wake-up. if en was forced high (to switch the tja1081b to normal mode) after an earlier wake-up event, then errn will a lways indicate the erro r detection status (in both normal and receive only modes). errn is in a high-impedance state in poweroff mode. table 3. signaling on pin errn stbn en conditions errn normal mode active h h no error detected high h h error detected low receive only mode active h l a wake-up was detected (errn went low in standby/sleep mode; en was not high) before the tja1081b was switched to receive only mode local wake-up detected high remote wake-up detected low h l en was forced high previously in response to an earlier wake-up event before the transition to receive only mode no error detected high error detected low standby or sleep modes active l x no local or remote wake-up detected high l x local or remote wake-up detected low
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 7 of 45 nxp semiconductors tja1081b flexray node transceiver 6.1.3 signaling on pins rxen and rxd signaling on pins rxen and rxd is determi ned by the tja1081b operating mode, as detailed in table 4 . [1] valid if v io and (v cc or v bat ) are present. table 4. rxen and rxd signaling operating mode rxen rxd tx inh low high low high normal bus active bus idle data_0 data_1 or idle enabled high receive-only disabled go-to-sleep local or remote wake-up detected [1] no local or remote wake-up detected local or remote wake-up detected [1] no local or remote wake-up detected standby sleep floating poweroff high impedance high fig 3. timing diagram in normal mode 015aaa342 txd bge rxd bm bp rxen txen
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 8 of 45 nxp semiconductors tja1081b flexray node transceiver 6.1.4 operating mode transitions state transitions are summarized in the state transition diagram in figure 4 and detailed in ta b l e 5 to ta b l e 8 . numbers are used to represent the state transitions. the numbers in the diagram correspond to the numbers in the third column in the tables. fig 4. state diagram 015aaa275 normal stbn = high en = high standby (1) stbn = low en = low sleep stbn = low en = x go-to-sleep stbn = low en = high receive only stbn = high en = low 1 4 12, 23 9, 19 11, 22 32, 33 7, 17, 40 3, 31 6, 34 10, 21 2 8, 18, 41 15, 26, 44, 45 5 20 24 16, 27, 46, 47 28, 48, 49 37, 38 13, 35, 36 14, 25, 42, 43 29, 30 poweroff from any mode 39 50
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 9 of 45 nxp semiconductors tja1081b flexray node transceiver [1] hold time of go-to-sleep is less than t h(gotosleep) . [2] hold time of go-to-sleep becomes greater than t h(gotosleep) . [3] transition to a non-low-power mode is blocked when the voltage on pin v cc is below v uvd(vcc) for longer than t det(uv)(vcc) . table 5. state transitions forced by en and stbn ? indicates the acti on that initiates a transaction; 1 ? and 2 ? indicated the consequences of a transaction. transition from mode direction to mode transition number pin flag notes stbn en uv vio uv vbat uv vcc pwon wake normal receive-only 1 h ? l cleared cleared cleared cleared x go-to-sleep 2 ? l h cleared cleared cleared cleared x standby 3 ? l ? l cleared cleared cleared cleared x receive-only normal 4 h ? h cleared cleared cleared x x go-to-sleep 5 ? l ? h cleared cleared cleared x x standby 6 ? l l cleared cleared cleared x x standby normal 7 ? h ? h cleared cleared cleared x x receive-only 8 ? h l cleared cleared cleared x x go-to-sleep 9 l ? h cleared cleared x x x go-to-sleep normal 10 ? h h cleared cleared cleared x x [1] receive-only 11 ? h ? l cleared cleared cleared x x [1] standby 12 l ? l cleared cleared x x x [1] sleep 13 l h cleared cleared x x cleared [2] sleep normal 14 ? h h cleared cleared cleared x x receive-only 15 ? h l cleared cleared cleared x x standby 16 ? h x cleared cleared x x x [3]
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 10 of 45 nxp semiconductors tja1081b flexray node transceiver [1] setting the wake flag clears the uv vio , uv vbat and uv vcc flags. [2] transition via standby mode. table 6. state transitions forced by a wake-up ? indicates the acti on that initiates a transaction; 1 ? and 2 ? indicated the consequences of a transaction. transition from mode direction to mode transition number pin flag note stbn en uv vio uv vbat uv vcc pwon wake standby normal 17 h h cleared cleared 1 ? cleared x ? set [1] receive-only 18 h l cleared cleared 1 ? cleared x ? set [1] go-to-sleep 19 l h cleared cleared 1 ? cleared x ? set [1] standby 20 l l cleared cleared 1 ? cleared x ? set [1] go-to-sleep normal 21 h h cleared cleared 1 ? cleared x ? set [1] receive-only 22 h l cleared cleared 1 ? cleared x ? set [1] standby 23 l l cleared cleared 1 ? cleared x ? set [1] go-to-sleep 24 l h cleared cleared 1 ? cleared x ? set [1] sleep normal 25 h h 1 ? cleared 1 ? cleared 1 ? cleared x ? set [1] [2] receive-only 26 h l 1 ? cleared 1 ? cleared 1 ? cleared x ? set [1] [2] standby 27 l l 1 ? cleared 1 ? cleared 1 ? cleared x ? set [1] go-to-sleep 28 l h 1 ? cleared 1 ? cleared 1 ? cleared x ? set [1] [2]
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 11 of 45 nxp semiconductors tja1081b flexray node transceiver [1] uv vio , uv vbat or uv vcc detected clears the wake flag. [2] transition already completed when the voltage on pin v cc is below v uvd(vcc) for longer than t det(uv)(vcc) . [3] uv vio overrules uv vcc . [4] uv vbat overrules uv vcc . [5] v dig (the internal digital supply voltage to the state machine) < v th(det)por . table 7. state transitions forced by an undervoltage condition ? indicates the acti on that initiates a transaction; 1 ? and 2 ? indicated the consequences of a transaction. transition from mode direction to mode transition number flag note uv vio uv vbat uv vcc pwon wake normal sleep 29 ? set cleared cleared cleared 1 ? cleared [1] sleep 30 cleared ? set cleared cleared 1 ? cleared [1] standby 31 cleared cleared ? set cleared 1 ? cleared [1] [2] receive-only sleep 32 ? set cleared cleared x 1 ? cleared [1] sleep 33 cleared ? set cleared x 1 ? cleared [1] standby 34 cleared cleared ? set x 1 ? cleared [1] [2] go-to-sleep sleep 35 ? set cleared cleared x 1 ? cleared [1] sleep 36 cleared ? set cleared x 1 ? cleared [1] standby sleep 37 ? set cleared x x 1 ? cleared [1] [3] sleep 38 cleared ? set x x 1 ? cleared [1] [4] xp o w e r o f f3 9xxxxx [5]
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 12 of 45 nxp semiconductors tja1081b flexray node transceiver [1] transition already completed when the voltage on pin v cc is above v uvr(vcc) for longer than t rec(uv)(vcc) . [2] the voltage on pin v bat is above v uvr(vbat) for longer than t rec(uv)(vbat) and v dig (the internal digital supply voltage to the state machine) > v th(rec)por . table 8. state transitions forced by an undervoltage recovery ? indicates the acti on that initiates a transaction; ? 1 and ? 2 are the consequences of a transaction. transition from mode direction to mode transition number pin flag note stbn en uv vio uv vbat uv vcc pwon wake standby normal 40 h h cleared cleared ? cleared x x [1] receive-only 41 h l cleared cleared ? cleared x x [1] sleep normal 42 h h cleared ? cleared cleared x x normal 43 h h ? cleared cleared cleared x x receive-only 44 h l cleared ? cleared cleared x x receive-only 45 h l ? cleared cleared cleared x x standby 46 l l cleared ? cleared cleared x x standby 47 l l ? cleared cleared cleared x x go-to-sleep 48 l h cleared ? cleared cleared x x go-to-sleep 49 l h ? cleared cleared cleared x x poweroff standby 50 x x x x x ? set x [2]
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 13 of 45 nxp semiconductors tja1081b flexray node transceiver 6.1.5 normal mode in normal mode, the transceiver is able to transmit and receive data via bus lines bp and bm. the output of the normal receiver is connected directly to pin rxd. transmitter behavior in normal mode, with no txen time-out (see section 6.4.7 ) and the temperature flag not set (temp high = 0; see ta b l e 1 0 ), is detailed in table 9 . in this mode, pin inh is set high. the transmitter is activated by the first low level detected on pin txd when pin bge high and pin txen is low. 6.1.6 receive-only mode in receive-only mode, the transceiver can only receive data. the transmitter is disabled, regardless of the voltage levels on pins bge and txen. in this mode, pin inh is set high. 6.1.7 standby mode standby mode is a low-power mode featuring ve ry low current consumption. in this mode, the transceiver cannot transmit or receive dat a. the low-power receiver is activated to monitor the bus for wake-up patterns. a transition to standby mode can be triggered by applying the appropriate levels on pins en and stbn (see figure 4 and table 5 ) or if an undervoltage is detected on pin v cc (see figure 4 and section 6.1.9 ). in this mode, pin inh is set high. if the wake flag is set, pins rxen and rx d are driven low; otherwise pins rxen and rxd are set high (see section 6.2 ). 6.1.8 go-to-sleep mode in this mode, the transceiver behaves as in standby mode. if go-to-sleep mode remains active longer than the go-to-sleep hold time (t h(gotosleep) ) and the wake flag has been cleared previously, the transcei ver switches to sleep mode regardless of the voltage on pin en. 6.1.9 sleep mode sleep mode is a low-power mode. the only difference between sleep mode and standby mode is that pin inh is set floating in sle ep mode. a transition to sleep mode is triggered from all other modes when the uv vio flag or the uv vbat flag is set (see ta b l e 7 ). table 9. transmitter function table bge txen txd transmitter l x x transmitter is disabled x h x transmitter is disabled h l h transmitter is enabled; the bus lines are actively driven; bp is driven high and bm is driven low h l l transmitter is enabled; the bus lines are actively driven; bp is driven low and bm is driven high
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 14 of 45 nxp semiconductors tja1081b flexray node transceiver when the wake flag is set, the undervoltage flags are reset and the transceiver switches from sleep mode to the mode indicated by the levels on pins en and stbn (see ta b l e 7 ), provided v io is valid. 6.2 wake-up mechanism from sleep mode (pin inh floating), the tran sceiver enters standby mode if the wake flag is set. consequently, pin i nh is switched on (high). if an undervoltage is not detected on pins v io , v cc or v bat , the transceiver switches immediately to the mode indicated by the levels on pins en and stbn. in standby, go-to-sleep and sleep modes, pi ns rxd, rxen and errn are driven low if the wake flag is set. 6.2.1 remote wake-up 6.2.1.1 bus wake-up via wake-up pattern a valid wake-up pattern on the bus triggers a remote wake-up. a valid remote wake-up pattern consists of a data_0, data_1 or id le, data_0, data_1 or idle sequence. the data_0 phases must last at least t det(wake)data_0 and the data_1 or idle phases at least t det(wake)idle . the entire sequence must be completed within t det(wake)tot . 6.2.1.2 bus wake-up via dedicated flexray data frame if the tja1081b receives a dedicated data frame that emulates a valid wake-up pattern as detailed figure 6 , the remote wake-up source flag is set. due to the byte start sequence (bss) pr eceding each byte, the data_0 and data_1 phases for the wake-up symbol are interrupted every 1 ? s. for 10 mbit/s the maximum interruption time is 130 ns. such interruptions do not prevent the transceiver from recognizing the wake-up pattern in the payload of a data frame. the remote wake-up sour ce flag is not set if an invalid wake-up pattern is received. fig 5. bus wake-up timing 015aaa273 0 v -500 mv v dif < t det(wake)tot > t det(wake)data_0 > t det(wake)idle > t det(wake)data_0 > t det(wake)idle
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 15 of 45 nxp semiconductors tja1081b flexray node transceiver 6.2.2 local wake-up via pin wake if the voltage on pin wake is lower than v th(det)(wake) for longer than t fltr(wake) (falling edge on pin wake) a local wake-up event on pin wake is de tected. at the same time, the biasing of this pin is switched to pull-down. if the voltage on pin wake is higher than v th(det)(wake) for longer than t fltr(wake) , the biasing of this pin is switched to pull-up, and a local wake-up is not detected. each interruption is 130 ns. the transition time from data_0 to data_1 and from data_1 to data_0 is about 20 ns. the tja1081b remote wake-up source flag is set by the following pattern: ffh, ffh, ffh, ffh, ffh, 00h, 00h, 00h, 00h, 00h, ffh, ffh, ffh, ffh, ffh, 00h, 00h, 00h, 00h, 00h, ffh, ffh, ffh, ffh, ffh, 00h, 00h, 00h, 00h, 00h, ffh, ffh, ffh, ffh, ffh, ffh fig 6. minimum bus patte rn for bus wake-up 015aaa361 v dif 0 v -2000 wake-up +2000 870 ns 870 ns 870 ns 870 ns 770 ns 130 ns 130 ns 130 ns 5 s 5 s 5 s 5 s sleep mode: v io and (v bat or v cc ) still provided. fig 7. local wake-up timing via pin wake 015aaa069 v bat v bat rxd, rxen and errn inh 0 v 0 v wake t fltr(wake) pull-up pull-up t fltr(wake) pull-down
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 16 of 45 nxp semiconductors tja1081b flexray node transceiver 6.3 fail-silent behavior to ensure fail-silent behavior, a reset mechanism for the digital state machine has been implemented along with undervoltage detection. if an undervoltage is detected on pins v cc , v io and/or v bat , the transceiver switches to a low-power mode. this action ensures that the transmitter and receiver are passive when an undervoltage is detected and that their behavior is defined. the digital state machine is supplied by v cc , v io or v bat , depending on which voltage is available. therefore, the digital state machine will be pr operly supplied as long as the voltage on pin v cc , v io or v bat remains above 4.5 v. if the voltage on all pins (i.e. v cc , v io and v bat ) breaks down, a reset signal is transmitted to the digital state machine. the reset signal is transmitted as soon as the internal supply voltage to the digital state machine is no longer high enough to guarantee proper operation. this ensures that the digital state machine is passive, and its behavior defined, when an undervoltage is detected. 6.3.1 v bat undervoltage if the uv vbat flag is set, the transceiver enters sleep mode (pin inh is switched off) regardless of the voltage levels on pins en and stbn. if the undervoltage recovers, the transceiver switches to the mode determined by the voltages on pins en and stbn. 6.3.2 v cc undervoltage if the uv vcc flag is set, the transceiver switches to standby mode regardless of the voltage levels on pins en and stbn. if the undervoltage recovers or the wake flag is set, mode switching via pins en and stbn is again enabled. 6.3.3 v io undervoltage if the voltage on pin v io is lower than v uvd(vio) for longer than t det(uv)(vio) (even if the uv vio flag is reset) pins en, stbn , txd and bge are set low (internally) and pin txen is set high (internally). if the uv vio flag is set, the transceiver enters sleep mode (pin inh is switched off). if the undervoltage recovers or the wake flag is set, mode switching via pins en and stbn is again enabled. 6.4 flags 6.4.1 local wake-up source flag the local wake-up source flag can only be set in a low-power mode. when a wake-up event is detected on pin wake (see section 6.2.2 ), the local wake-up source flag is set. the local wake-up source flag is re set by entering a low-power mode. 6.4.2 remote wake-up source flag the remote wake-up source flag can only be set in a low-power mode if pin v bat is within its operating range. when a remote wake-up event is detected on the bus lines (see section 6.2.1 ), the remote wake-up source flag is set. the remote wake-up source flag is reset by entering a low-power mode.
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 17 of 45 nxp semiconductors tja1081b flexray node transceiver 6.4.3 wake flag the wake flag is set if the lo cal or remote wake-up source fl ag is set. the wake flag is reset by entering a low-power mode or by setting one of the undervoltage flags. 6.4.4 power-on flag if the internal supply voltage to the digital section rises above the minimum operating level, the pwon power-on flag is set. the pwon flag is reset when the tja1081b enters normal mode. 6.4.5 temperature medium flag if the junction temperature exceeds t j(warn)(medium) in a normal-power mode, the temperature medium flag is set. the temperat ure medium flag is reset when the junction temperature drops below t j(warn)(medium) (in a normal-power mode or after the status register has been read in a low-power mode). no action is taken when this flag is set. 6.4.6 temperature high flag if the junction temperature exceeds t j(dis)(high) in a normal-power mode, the temperature high flag is set. if a negative edge is applied to pin txen while the junction temperature is below t j(dis)(high) in a normal-power mode, the temperature high flag is reset. the transmitter is disabled when the temperature high flag is set. 6.4.7 txen clamped flag the txen clamped flag is set if pin txen is low for longer than t detcl(txen) . the txen clamped flag is reset if pin txen is high. if t he txen clamped flag is set, the transmitter is disabled. 6.4.8 bus error flag the bus error flag is set if pin txen is low, pin bge is high and the data received on the bus lines (pins bp and bm) is different to that received on pin txd. the transmission of any valid communication el ement, including a wake-up pa ttern, will not be detected as a bus error. the bus error flag is reset if the data on the bus lines (pins bp and bm) is the same as on pin txd or if the transmitter is disabled. no action is taken when the bus error flag is set. 6.4.9 uv vbat flag the uv vbat flag is set if the voltage on pin v bat is lower than v uvd(vbat) for longer than t det(uv)(vbat) . the uv vbat flag is reset if the voltage is higher than v uvr(vbat) for longer than t to(uvr)(vbat) or by setting the wake flag; see section 6.3.1 . 6.4.10 uv vcc flag in a non-low-power mode, the uv vcc flag is set if the voltage on pin v cc is lower than v uvd(vcc) for longer than t det(uv)(vcc) . in a low-power mode, the uv vcc flag is set if the voltage on pin v cc is lower than v uvd(vcc) for longer than t to(uvd)(vcc) . the uv vcc flag is reset if the voltage on pin v cc is higher than v uvr(vcc) for longer than t to(uvr)(vcc) or the wake flag is set; see section 6.3.2 .
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 18 of 45 nxp semiconductors tja1081b flexray node transceiver 6.4.11 uv vio flag the uv vio flag is set if the voltage on pin v io is lower than v uvd(vio) for longer than t to(uvd)(vio) . the flag is reset if the voltage on pin v io is higher than v uvr(vio) for longer than t to(uvr)(vio) or the wake flag is set; see section 6.3.3 . 6.5 status register pin errn goes low when one or more of status bits s4 to s10 is set. the contents of the status register ( ta b l e 1 0 ) can be read out on pin errn using the input signal on pin en as a clock. the timing diagram is shown in figure 8 . the status register is accessible if: ? uv vio flag is not set and the voltage on pin v io is between 4.75 v and 5.25 v ? uv vcc flag is not set and the voltage on pin v io is between 2.8 v and 4.75 v after reading the status register, if an edge is not detected on pin en for t det(en) , status bits s4 to s10 are cleared provided the corresponding flags have been reset. table 10. status bits bit number status bit description s0 local wakeup local wake-up source flag is redirect ed to this bit s1 remote wakeup remote wa ke-up source flag is redirected to this bit s2 - not used; always set s3 pwon status bit set means pwon flag has been set previously s4 bus error status bit set means bus error flag has been set previously s5 temp high status bit set means temperature high flag has been set previously s6 temp medium status bit set means temperature medium flag has been set previously s7 txen clamped status bit set means txen clamped flag has been set previously s8 uvvbat status bit set means uv vbat flag has been set previously s9 uvvcc status bit set means uv vcc flag has been set previously s10 uvvio status bit set means uv vio flag has been set previously s11 bge feedback bge feedback (statu s bit reset if pin bge low; status bit set if pin bge high) s12 - not used; always reset
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 19 of 45 nxp semiconductors tja1081b flexray node transceiver fig 8. timing diagram for status bits 015aaa341 s0 s1 s2 t clk(en) t det(en) t d(en-errn) receive only normal stbn en errn 0.7v io 0.7v io 0.7v io 0.3v io
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 20 of 45 nxp semiconductors tja1081b flexray node transceiver 7. limiting values table 11. limiting values in accordance with the absolute maximum rating system (iec 60134). all voltages are referenced to ground. symbol parameter conditions min max unit v bat battery supply voltage no time limit ? 0.3 +60 v operating range 4.75 60 v v cc supply voltage no time limit ? 0.3 +5.5 v operating range 4.75 5.25 v v io supply voltage on pin v io no time limit ? 0.3 +5.5 v operating range 2.8 5.25 v v inh voltage on pin inh ? 0.3 v bat + 0.3 v i o(inh) output current on pin inh no time limit ? 1- ma v wake voltage on pin wake ? 0.3 v bat + 0.3 v i o(wake) output current on pin wake pin gnd not connected ? 15 - ma v bge voltage on pin bge no time limit ? 0.3 +5.5 v v txen voltage on pin txen no time limit ? 0.3 +5.5 v v txd voltage on pin txd no time limit ? 0.3 +5.5 v v errn voltage on pin errn no time limit ? 0.3 v io + 0.3 v v rxd voltage on pin rxd no time limit ? 0.3 v io + 0.3 v v rxen voltage on pin rxen no time limit ? 0.3 v io + 0.3 v v en voltage on pin en no time limit ? 0.3 +5.5 v v stbn voltage on pin stbn no time limit ? 0.3 +5.5 v v bp voltage on pin bp no time limit; with resect to pins bm, v bat , wake, inh and gnd ? 60 +60 v v bm voltage on pin bm no time limit; with resect to pins bp, v bat , wake, inh and gnd ? 60 +60 v v trt transient voltage on pins bm and bp [1] ? 100 - v [2] -75 v [3] ? 150 - v [4] -100 v t stg storage temperature ? 55 +150 ?c t vj virtual junction temperature [5] ? 40 +150 ?c t amb ambient temperature ? 40 +125 ?c v esd electrostatic discharge voltage hbm on pins bp and bm to ground [6] ? 6.0 +6.0 kv hbm on pins v bat and wake to ground [6] ? 4.0 +4.0 kv hbm at all other pins [6] ? 2.0 +2.0 kv mm on all pins [7] ? 100 +100 v cdm on corner pins [8] ? 750 +750 v cdm on all other pins [8] ? 500 +500 v iec61000-4-2 on pins bp and bm to ground [9] ? 6.0 +6.0 kv iec61000-4-2 on pin v bat to ground [9] [10] ? 6.0 +6.0 kv iec61000-4-2 on pin wake to ground [9] [11] ? 6.0 +6.0 kv
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 21 of 45 nxp semiconductors tja1081b flexray node transceiver [1] according to iso7637, test pulse 1, cl ass c; verified by an external test house. [2] according to iso7637, test pulse 2a, cl ass c; verified by an external test house. [3] according to iso7637, test pulse 3a, cl ass c; verified by an external test house. [4] according to iso7637, test pulse 3b, cl ass c; verified by an external test house. [5] in accordance with iec 60747-1. an alternative definition of t vj is: t vj = t amb + p ? r th(j-a) , where r th(j-a) is a fixed value to be used for the calculation of t vj . the rating for t vj limits the allowable combinations of pow er dissipation (p) and ambient temperature (t amb ). [6] hbm: c = 100 pf; r = 1.5 k ? . [7] mm: c = 200 pf; l = 0.75 ? h; r = 10 ? . [8] cdm: r = 1 ? . [9] iec61000-4-2: c = 150 pf; r = 330 ? ; verified by an external test house. the test result is equal to or better than ? 6 kv (unaided). [10] with 100 nf from v bat to gnd. [11] with 3.3 k ?? in series. 8. thermal characteristics 9. static characteristics table 12. thermal characteristics symbol parameter conditions typ unit r th(j-a) thermal resistance from junction to ambient in free air 118 k/w table 13. static characteristics all parameters are guaranteed for v bat = 4.45 v to 60 v; v cc = 4.45 v to 5.25 v; v io = 2.55 v to 5.25 v; t vj = ? 40 ? c to +150 ? c; c bus = 100 pf; r bus = 40 ? to 55 ? unless otherwise specified. all voltages are defined with respect to ground; positive currents flow into the ic. symbol parameter conditions min typ max unit pin v bat i bat battery supply current low-power modes; no load on pin inh --55 ? a normal-power modes - - 1 ma v uvd(vbat) undervoltage detection voltage on pin v bat 4.45 - 4.715 v v uvr(vbat) undervoltage recovery voltage on pin v bat 4.475 - 4.74 v v uvhys(vbat) undervoltage hysteresis voltage on pin v bat 25 - 290 mv pin v cc i cc supply current low-power modes ? 1+2+10 ? a normal mode; v bge =0v; v txen = v io ; receive-only mode -1122ma normal mode; v bge =v io ; v txen = 0 v -4760ma normal mode; v bge =v io ; v txen = 0 v; r bus = ? ? -2140ma v uvd(vcc) undervoltage detection voltage on pin v cc 4.45 - 4.72 v
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 22 of 45 nxp semiconductors tja1081b flexray node transceiver v uvr(vcc) undervoltage recovery voltage on pin v cc 4.47 - 4.74 v v uvhys(vcc) undervoltage hysteresis voltage on pin v cc 20 - 290 mv pin v io i io supply current on pin v io low-power modes; v txen = v io ? 1+2+10 ? a normal and receive-only modes; v txd = v io - - 1000 ? a i r(vio) reverse current on pin v io from digital input pins; poweroff mode; v txen =5.25 v; v txd =5.25 v; v bge = 5.25 v; v en =5.25v; v stbn =5.25 v; v cc =v io =0 v ? 5- +5 ? a v uvd(vio) undervoltage detection voltage on pin v io 2.55 - 2.765 v v uvr(vio) undervoltage recovery voltage on pin v io 2.575 - 2.79 v v uvhys(vio) undervoltage hysteresis voltage on pin v io 25 - 240 mv pin en v ih high-level input voltage 0.7v io -5.5v v il low-level input voltage ? 0.3 - 0.3v io v i ih high-level input current v en = 0.7v io 3- 15 ? a i il low-level input current v en = 0 v ? 10 +1 ? a pin stbn v ih high-level input voltage 0.7v io -5.5v v il low-level input voltage ? 0.3 - 0.3v io v i ih high-level input current v stbn = 0.7v io 3- 15 ? a i il low-level input current v stbn = 0 v ? 10 +1 ? a pin txen v ih high-level input voltage 0.7v io -5.5v v il low-level input voltage ? 0.3 - 0.3v io v i ih high-level input current v txen = v io ? 10 +1 ? a i il low-level input current v txen = 0.3v io ? 300 - ? 50 ? a i l leakage current v txen = 5.25 v; v io = 0 v ? 10 +1 ? a pin bge v ih high-level input voltage 0.7v io -5.5v v il low-level input voltage ? 0.3 - 0.3v io v i ih high-level input current v bge = 0.7v io 3- 15 ? a i il low-level input current v bge = 0 v ? 10 +1 ? a pin txd table 13. static characteristics ?continued all parameters are guaranteed for v bat = 4.45 v to 60 v; v cc = 4.45 v to 5.25 v; v io = 2.55 v to 5.25 v; t vj = ? 40 ? c to +150 ? c; c bus = 100 pf; r bus = 40 ? to 55 ? unless otherwise specified. all voltages are defined with respect to ground; positive currents flow into the ic. symbol parameter conditions min typ max unit
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 23 of 45 nxp semiconductors tja1081b flexray node transceiver v ih high-level input voltage normal-power modes 0.6v io -v io + 0.3 v v il low-level input voltage normal-power modes ? 0.3 - 0.4v io v i ih high-level input current v txd = v io 3- 15 ? a i il low-level input current normal-power modes; v txd =0v ? 50 +5 ? a low-power modes ? 1 0 +1 ? a i li input leakage current v txd = 5.25 v; v io = 0 v ? 10 +1 ? a c i input capacitance not tested; with respect to all other pins at ground; v txd =100 mv; f=5mhz [1] - 5 10 pf pin rxd i oh high-level output current v rxd = v io ? 0.4 v; v io =v cc ? 20 - ? 2ma i ol low-level output current v rxd = 0.4 v 2 - 20 ma v oh high-level output voltage i oh(rxd) = ? 2ma [1] v io ? 0.4 -v io v v ol low-level output voltage i ol(rxd) =2ma [1] --0.4v v o output voltage when undervoltage on v io ; v cc ? 4.75 v; r l =100k ? to ground --0.5v r l =100 k ? to v io ; power off v io ? 0.5 -v io v pin errn i oh high-level output current v errn =v io ? 0.4 v; v io =v cc ? 8 ? 3 ? 0.5 ma i ol low-level output current v errn = 0.4 v 0.5 2 8 ma v oh high-level output voltage i oh(errn) = ? 0.5 ma [1] v io ? 0.4 -v io v v ol low-level output voltage i ol(errn) =0.5ma [1] --0.4v i l leakage current 0 v ? v errn ? v io ; power off ? 50 +5 ? a v o output voltage when undervoltage on v io ; v cc > 4.75 v; r l =100k ? to ground --0.5v r l =100 k ? to ground; power off --0.5v pin rxen i oh high-level output current v rxen = v io ? 0.4 v; v io =v cc ? 8 ? 3 ? 0.5 ma i ol low-level output current v rxen = 0.4 v 0.5 2 8 ma v oh high-level output voltage i oh(rxen) = ? 0.5 ma [1] v io ? 0.4 -v io v table 13. static characteristics ?continued all parameters are guaranteed for v bat = 4.45 v to 60 v; v cc = 4.45 v to 5.25 v; v io = 2.55 v to 5.25 v; t vj = ? 40 ? c to +150 ? c; c bus = 100 pf; r bus = 40 ? to 55 ? unless otherwise specified. all voltages are defined with respect to ground; positive currents flow into the ic. symbol parameter conditions min typ max unit
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 24 of 45 nxp semiconductors tja1081b flexray node transceiver v ol low-level output voltage i ol(rxen) =0.5ma [1] --0.4v i l leakage current 0 v ? v rxen ? v io ; power off ? 50 +5 ? a v o output voltage when undervoltage on v io ; v cc > 4.75 v; r l =100k ? to ground --0.5v r l =100 k ? to v io ; power off v io ? 0.5 -v io v pins bp and bm v o(idle)(bp) idle output voltage on pin bp normal or receive-only mode; v txen =v io ; 4.5 v ? v cc ? 5.25 v 0.4v cc 0.5v cc 0.6v cc v standby, go-to-sleep or sleep mode ? 0.1 0 +0.1 v v o(idle)(bm) idle output voltage on pin bm normal or receive-only mode; v txen = v io ; 4.5 v ? v cc ? 5.25 v 0.4v cc 0.5v cc 0.6v cc v standby, go-to-sleep or sleep mode ? 0.1 0 +0.1 v i o(idle)bp idle output current on pin bp ? 60 v ? v bp ? +60 v; with respect to ground and v bat ? 7.5 - +7.5 ma i o(idle)bm idle output current on pin bm ? 60 v ? v bm ? +60 v; with respect to ground and v bat ? 7.5 - +7.5 ma v o(idle)(dif) differential idle output voltage [2] ? 25 0 +25 mv v oh(dif) differential high-level output voltage 4.75 v ? v cc ? 5.25 v [2] 900 - 2000 mv 4.45 v ? v cc ? 5.25 v [2] 700 - 2000 mv v ol(dif) differential low-level output voltage 4.75 v ? v cc ? 5.25 v [2] ? 2000 - ? 900 mv 4.45 v ? v cc ? 5.25 v [2] ? 2000 - ? 700 mv v ih(dif) differential high-level input voltage normal-power modes; ? 10 v ? v cm ? +15 v; see figure 10 [3] [4] 150 210 300 mv v il(dif) differential low-level input voltage normal-power modes; ? 10 v ? v cm ? +15 v; see figure 10 [3] [4] ? 300 ? 210 ? 150 mv low-power modes; see figure 10 [4] ? 400 ? 300 ? 100 mv ?? v i(dif)(h-l) ? differential input volt. diff. betw. high- and low-levels (abs. value) normal-power modes; v cm =2.5v [4] ? 30 - +30 mv ?v i(dif)det(act) ? activity detection differential input voltage (absolute value) normal-power modes 150 210 300 mv table 13. static characteristics ?continued all parameters are guaranteed for v bat = 4.45 v to 60 v; v cc = 4.45 v to 5.25 v; v io = 2.55 v to 5.25 v; t vj = ? 40 ? c to +150 ? c; c bus = 100 pf; r bus = 40 ? to 55 ? unless otherwise specified. all voltages are defined with respect to ground; positive currents flow into the ic. symbol parameter conditions min typ max unit
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 25 of 45 nxp semiconductors tja1081b flexray node transceiver ?i o(sc) ? short-circuit output current (absolute value) on pin bp; ? 5v ? v bp ? +60 v r sc ? 1 ? ; t sc ? 1500 ? s [5] [6] --72ma on pin bp; ? 5v ? v bp ? +27 v r sc ? 1 ? ; t sc ? 1500 ? s [5] [6] --60ma on pin bm; ? 5v ? v bm ? +60 v r sc ? 1 ? ; t sc ? 1500 ? s [5] [6] --72ma on pin bm; ? 5v ? v bm ? +27 v; r sc ? 1 ? ; t sc ? 1500 ? s [5] [6] --60ma on pins bp and bm; r sc ? 1 ? ; t sc ? 1500 ? s; v bp =v bm [5] [6] --60ma r i(bp) input resistance on pin bp idle level; r bus = ? ? 10 18 40 k ? r i(bm) input resistance on pin bm idle level; r bus = ? ? 10 18 40 k ? r i(dif)(bp-bm) differential input resistance between pin bp and pin bm idle level; r bus = ? ? 20 36 80 k ? i li(bp) input leakage current on pin bp power off; v bp =v bm = 5 v; all other pins connected to gnd; gnd connected to 0 v ? 50 +5 ? a loss of ground; v bp =v bm =0v; all other pins connected to 16 v via 0 ? [1] ? 1600 +1600 ? a i li(bm) input leakage current on pin bm power off; v bp =v bm = 5 v; all other pins connected to gnd; gnd connected to 0 v ? 50 +5 ? a loss of ground; v bp =v bm =0v; all other pins connected to 16 v via 0 ? [1] ? 1600 +1600 ? a v cm(bus)(data_0) data_0 bus common-mode voltage 0.4v cc 0.5v cc 0.6v cc v v cm(bus)(data_1) data_1 bus common-mode voltage 0.4v cc 0.5v cc 0.6v cc v ? v cm(bus) bus common-mode voltage difference ? 30 0 +30 mv c i(bp) input capacitance on pin bp with respect to all other pins at ground; v bp = 100 mv; f = 5 mhz [1] - 8 15 pf c i(bm) input capacitance on pin bm with respect to all other pins at ground; v bm =100 mv; f = 5 mhz [1] - 8 15 pf table 13. static characteristics ?continued all parameters are guaranteed for v bat = 4.45 v to 60 v; v cc = 4.45 v to 5.25 v; v io = 2.55 v to 5.25 v; t vj = ? 40 ? c to +150 ? c; c bus = 100 pf; r bus = 40 ? to 55 ? unless otherwise specified. all voltages are defined with respect to ground; positive currents flow into the ic. symbol parameter conditions min typ max unit
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 26 of 45 nxp semiconductors tja1081b flexray node transceiver [1] not tested in production; guaranteed by design. [2] values also guaranteed when the signal on txd is cons tant for between 100 ns and 4400 ns before the first edge. [3] activity detected previously. [4] v cm is the bp/bm common mode voltage. [5] r sc is the short-circuit resistance; voltage di fference between bus pins bp and bm is 60 v max. [6] t sc is the minimum duration of the short circuit. [7] z o(eq)tx = 50 ? ? (v bus(100) -v bus(40) )/(2.5 ? v bus(40) -v bus(100) ) where: - v bus(100) is the differential output voltage on a load of 100 ?? and 100 pf in parallel - v bus(40) is the differential output voltage on a load of 40 ? and 100 pf in parallel when driving a data_1. c i(dif)(bp-bm) differential input capacitance between pin bp and pin bm with respect to all other pins at ground; v (bm-bp) =100 mv; f=5mhz [1] -25pf z o(eq)tx transmitter equivalent output impedance normal mode; r bus =40 ? or 100 ? ; c bus = 100 pf [1] [7] 10 - 600 ? pin inh v oh(inh) high-level output voltage on pin inh i inh = ? 0.2 ma v bat ? 0.8 v bat ? 0.3 v bat v i inh = ? 1 ma; v bat ? 5.5 v v bat ? 4 -v bat v i l(inh) leakage current on pin inh sleep mode ? 50 +5 ? a i ol(inh) low-level output current on pin inh v inh = 0 v ? 7 ? 4 ? 1ma pin wake v th(det)(wake) detection threshold voltage on pin wake low-power mode 2 - 3.75 v v hys hysteresis voltage 0.3 - 1.2 v i il low-level input current v wake = 2 v for t>t fltr(wake) 3- 11 ? a v wake = 0 v ? 2- ? 0.3 ? a i ih high-level input current v wake = 3.75 v for t>t fltr(wake) ; 4.75 v ? v bat ? 60 v ? 11 - ? 3 ? a v wake = v bat 0.2 - 2 ? a temperature protection t j(warn)(medium) medium warning junction temperature v bat > 5.5 v 155 165 175 ?c t j(dis)(high) high disable junction temperature v bat > 5.5 v 180 190 200 ?c power-on reset v th(det)por power-on reset detection threshold voltage of internal digital circuitry 3.0 - 3.4 v v th(rec)por power-on reset reco very threshold voltage of internal digital circuitry 3.1 - 3.5 v v hys(por) power-on reset hysteresis voltage of internal digital circuitry 100 - 500 mv table 13. static characteristics ?continued all parameters are guaranteed for v bat = 4.45 v to 60 v; v cc = 4.45 v to 5.25 v; v io = 2.55 v to 5.25 v; t vj = ? 40 ? c to +150 ? c; c bus = 100 pf; r bus = 40 ? to 55 ? unless otherwise specified. all voltages are defined with respect to ground; positive currents flow into the ic. symbol parameter conditions min typ max unit
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 27 of 45 nxp semiconductors tja1081b flexray node transceiver 10. dynamic characteristics table 14. dynamic characteristics all parameters are guaranteed for v bat = 4.45 v to 60 v; v cc = 4.45 v to 5.25 v; v io = 2.55 v to 5.25 v; t vj = ? 40 ? c to +150 ? c; c bus = 100 pf; r bus = 40 ? to 55 ? unless otherwise specified. all volta ges are defined with respect to ground; positive currents flow into the ic. symbol parameter conditions min typ max unit pins bp and bm t d(txd-bus) delay time from txd to bus normal mode; see figure 9 [1] [2] data_0 --50ns data_1 --50ns ? t d(txd-bus) delay time difference from txd to bus normal mode; between data_0 and data_1; see figure 10 [1] [2] [3] ? 4- +4 ns t d(bus-rxd) delay time from bus to rxd normal mode; v cm =2.5v; c rxd = 25 pf; see figure 10 [3] data_0 --75ns data_1 --75ns ? t d(bus-rxd) delay time difference from bus to rxd normal mode; v cm =2.5v; c rxd = 25 pf; between data_0 and data_1; see figure 10 [3] ? 5- +5 ns t d(txen-busidle) delay time from txen to bus idle normal mode; see figure 9 -3575ns t d(txen-busact) delay time from txen to bus active normal mode; see figure 9 -4675ns ? t d(txen-bus) delay time difference from txen to bus normal mode; between txen-to-bus active and txen-to-bus idle; txd low; see figure 9 ? 50 - +50 ns t d(bge-busidle) delay time from bge to bus idle normal mode; see figure 9 -3575ns t d(bge-busact) delay time from bge to bus active normal mode; see figure 9 -4775ns t d(txenh-rxdh) delay time from txen high to rxd high normal mode; txd low - - 325 ns bus slope t r(dif)(bus) bus differential rise time 20 % to 80 % [1] 6- 18.75ns data_0 to idle; ? 300 mv to ? 30 mv; normal mode --30ns t f(dif)(bus) bus differential fall time 80 % to 20 % [1] 6- 18.75ns idle to data_0; ? 30 mv to ? 300 mv; normal mode --30ns data_1 to idle; 300 mv to 30 mv; normal mode --30ns ? t (r-f)(dif) difference between differential rise and fall time 80 % to 20 % ? 3- +3 ns
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 28 of 45 nxp semiconductors tja1081b flexray node transceiver pin rxd t r rise time c rxd = 15 pf; 20 % to 80 % - - 9 ns c rxd = 25 pf; 20 % to 80 % - - 10.75 t f fall time c rxd = 15 pf; 80 % to 20 % - - 9 ns c rxd = 25 pf; 80 % to 20 % - - 10.75 t (r+f) sum of rise and fall time c rxd = 15 pf; 20 % to 80 % and 80 % to 20 % --13ns c rxd = 25 pf; 20 % to 80 % and 80 % to 20 % --16.5ns c rxd = 10 pf load at end of 50 ? ? strip with 1 ns delay; 20 % to 80 % and 80 % to 20 %; simulation only --16.5ns ? t (r-f) difference between rise and fall time c rxd = 15 pf; 20 % to 80 % ? 5- +5 ns c rxd = 25 pf; 20 % to 80 % ? 5- +5 ns c rxd = 10 pf load at end of 50 ? ? strip with 1 ns delay; 20 % to 80 % and 80 % to 20 %; simulation only ? 5- +5 ns wake symbol detection t det(wake)data_0 data_0 wake-up detection time standby or sleep mode; ? 10 v ? v cm ? +15 v 1- 4 ? s t det(wake)idle idle wake-up detection time 1 - 4 ? s t det(wake)tot total wake-up detection time 50 - 115 ? s t sup(int)wake wake-up interruption suppression time [4] 130 - 1000 ns reaction time t d(wakedet-inhh) delay time from wake-up detection to inh high low-power mode; r l(inh-gnd) = 100 k ? ; v inh =2 v --35 ? s t d(event-errnl) delay time from event detection to errn low low-power mode - - 10 ? s t d(wakedet-rxdl) delay time from wake-up detection to rxd low low-power mode - - 10 ? s t d(stbnx-moch) delay time from stbn changing to mode change --100 ? s t d(enx-moch) delay time from en changing to mode change --100 ? s undervoltage detection t det(uv)(vcc) undervoltage detection time on pin v cc v cc =4.35v 5 - 100 ? s t to(uvd)(vcc) undervoltage detection time-out time on pin v cc 100 - 670 ms t rec(uv)(vcc) undervoltage recovery time on pin v cc v cc =4.85v 5 - 100 ? s t to(uvr)(vcc) undervoltage recovery time-out time on pin v cc 1- 5.2ms table 14. dynamic characteristics ?continued all parameters are guaranteed for v bat = 4.45 v to 60 v; v cc = 4.45 v to 5.25 v; v io = 2.55 v to 5.25 v; t vj = ? 40 ? c to +150 ? c; c bus = 100 pf; r bus = 40 ? to 55 ? unless otherwise specified. all volta ges are defined with respect to ground; positive currents flow into the ic. symbol parameter conditions min typ max unit
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 29 of 45 nxp semiconductors tja1081b flexray node transceiver t det(uv)(vio) undervoltage detection time on pin v io v io =2.45v 5 - 100 ? s t to(uvd)(vio) undervoltage detection time-out time on pin v io 100 - 670 ms t rec(uv)(vio) undervoltage recovery time on pin v io v io =2.9v 5 - 100 ? s t to(uvr)(vio) undervoltage recovery time-out time on pin v io 1- 5.2ms t det(uv)(vbat) undervoltage detection time on pin v bat v bat =4.35v 5 - 100 ? s t rec(uv)(vbat) undervoltage recovery time on pin v bat v bat =4.85v 5 - 100 ? s t to(uvr)(vbat) undervoltage recovery time-out time on pin v bat 1- 5.2ms activity detection t det(act)(bus) activity detection time on bus pins v dif : 0 mv ? 400 mv; v cm =2.5v; 100 - 200 ns t det(idle)(bus) idle detection time on bus pins v dif : 400 mv ? 0 mv; v cm =2.5v; 100 - 200 ns ? t det(act-idle) difference between active and idle detection time v cm = 2.5 v ? 50 - +50 ns mode control pins t d(stbn-rxd) stbn to rxd delay time stbn high to rxd high; remote or local wake-up source flag set 3- 12 ? s t fltr(stbn) filter time on pin stbn rising and falling edges 3 - 10 ? s t d(stbn-stb) delay time from stbn to standby mode stbn low to standby mode; receive-only mode [5] --10 ? s t h(gotosleep) go-to-sleep hold time 20 35 50 ? s status register t det(en) detection time on pin en for mode control 5 - 20 ? s t clk(en) clock period on pin en en signal used as clock for reading status bits; see figure 8 1- 5 ? s t d(en-errn) delay time from en to errn when reading status bits; see figure 8 --0.5 ? s pin wake t fltr(wake) filter time on pin wake low-power modes; falling edge on pin wake; 5.5 v ? v bat ? 27 v 2.9 - 100 ? s low-power modes; falling edge on pin wake; 27 v ? v bat ? 60 v 2.9 - 175 ? s table 14. dynamic characteristics ?continued all parameters are guaranteed for v bat = 4.45 v to 60 v; v cc = 4.45 v to 5.25 v; v io = 2.55 v to 5.25 v; t vj = ? 40 ? c to +150 ? c; c bus = 100 pf; r bus = 40 ? to 55 ? unless otherwise specified. all volta ges are defined with respect to ground; positive currents flow into the ic. symbol parameter conditions min typ max unit
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 30 of 45 nxp semiconductors tja1081b flexray node transceiver [1] values also guaranteed when the signal on txd is cons tant for between 100 ns and 4400 ns before the first edge. [2] sum of rise and fall times on txd (20 % to 80 % on v io ) is 9 ns (max). [3] guaranteed for v bus(dif) = ?300 mv and v bus(dif) = ? 150 mv; v bus(dif) is the differential bus voltage v bp ? v bm . [4] the minimum value is guaranteed when the phase that was in terrupted was present conti nuously for at least 870 ns. [5] same parameter is guaranteed by design for the transition from normal to go-to-sleep mode. [6] not tested in production; guaranteed by design. [7] t d(busact-rxdl) = t d(bus-rxd) + t det(act)(bus) . [8] t d(busidle-rxdh) = t d(bus-rxd) + t det(idle)(bus) . miscellaneous t detcl(txen) txen clamp detection time 650 - 2600 ? s t d(busact-rxdl) delay time from bus active to rxd low normal mode; v cm =2.5v; c rxd = 25 pf; see figure 9 [6] [7] 100 - 275 ns t d(busidle-rxdh) delay time from bus idle to rxd high normal mode; v cm =2.5v; c rxd = 25 pf; see figure 9 [6] [8] 100 - 275 ns table 14. dynamic characteristics ?continued all parameters are guaranteed for v bat = 4.45 v to 60 v; v cc = 4.45 v to 5.25 v; v io = 2.55 v to 5.25 v; t vj = ? 40 ? c to +150 ? c; c bus = 100 pf; r bus = 40 ? to 55 ? unless otherwise specified. all volta ges are defined with respect to ground; positive currents flow into the ic. symbol parameter conditions min typ max unit
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 31 of 45 nxp semiconductors tja1081b flexray node transceiver fig 9. detailed timing diagram 015aaa274 20 % 80 % t d(bus-rxd) t d(bus-rxd) 0.5v io 0.5v io 0.5v io +300 mv -300 mv 0 v bp - bm bge txen txd rxen rxd 0.5v io 0.5v io -300 mv -300 mv t r(dif)(bus) t f(dif)(bus) t d(txd-bus) t d(txd-bus) t d(txen-busidle) t d(bge-busidle) t d(txen-busact) t d(bge-busact) t r(dif)(bus) t f(dif)(bus) t d(busidle-rxdh) t d(busact-rxdl) +150 mv -150 mv -30 mv -30 mv
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 32 of 45 nxp semiconductors tja1081b flexray node transceiver (1) ? v bus ? = 400 mv (min) to 3000 mv (max). (2) t r(bus) and t f(bus) are defined for v bus between ? 300 mv and +300 mv; t r(bus) = t f(bus) = 22.5 ns for ? v bus ? = 400 mv to 800 mv; value will be lower for ? v bus ? > 800 mv. fig 10. normal receiver timing diagram 0 % v io 20 % v io 80 % v io 100 % v io 50 % v io t f(bus) (2) 22.5 ns max. t r(bus) (2) 22.5 ns max. -300 mv -v bus (1) 0 mv -150 mv +150 mv +300 mv +v bus (1) v bus t t d(bus-rxd)data_0 60 ns to 4340 ns t d(bus-rxd)data_1 t r(rxd) t f(rxd) rxd 015aaa142
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 33 of 45 nxp semiconductors tja1081b flexray node transceiver 11. test information fig 11. test circuit for dynamic characteristics 15 pf tja1081b 10 f +12 v v cc v io v bat r bus c bus bp 15 316 11 14 6 bm rxd +5 v 100 nf 015aaa265
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 34 of 45 nxp semiconductors tja1081b flexray node transceiver 12. package outline fig 12. package outline sot338-1 (ssop16) unit a 1 a 2 a 3 b p cd (1) e (1) eh e ll p qz ywv references outline version european projection issue date iec jedec jeita mm 0.21 0.05 1.80 1.65 0.25 0.38 0.25 0.20 0.09 6.4 6.0 5.4 5.2 0.65 1.25 7.9 7.6 1.03 0.63 0.9 0.7 1.00 0.55 8 0 o o 0.13 0.2 0.1 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. sot338-1 99-12-27 03-02-19 (1) w m b p d h e e z e c v m a x a y 1 8 16 9 a a 1 a 2 l p q detail x l (a ) 3 mo-150 pin 1 index 0 2.5 5 mm scale ssop16: plastic shrink small outline package; 16 leads; body width 5.3 mm sot338-1 a max. 2
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 35 of 45 nxp semiconductors tja1081b flexray node transceiver 13. soldering of smd packages this text provides a very brief insight into a complex technology. a more in-depth account of soldering ics can be found in application note an10365 ?surface mount reflow soldering description? . 13.1 introduction to soldering soldering is one of the most common methods through which packages are attached to printed circuit boards (pcbs), to form electr ical circuits. the soldered joint provides both the mechanical and the electrical connection. th ere is no single sold ering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mount devices (smds) are mixed on one printed wiring board; however, it is not suitable for fine pitch smds. reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 13.2 wave and reflow soldering wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. the wave soldering process is suitable for the following: ? through-hole components ? leaded or leadless smds, which are glued to the surface of the printed circuit board not all smds can be wave soldered. packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. also, leaded smds with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased pr obability of bridging. the reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. leaded packages, packages with solder balls, and leadless packages are all reflow solderable. key characteristics in both wave and reflow soldering are: ? board specifications, in cluding the board finish , solder masks and vias ? package footprints, including solder thieves and orientation ? the moisture sensitivit y level of the packages ? package placement ? inspection and repair ? lead-free soldering versus snpb soldering 13.3 wave soldering key characteristics in wave soldering are: ? process issues, such as application of adhe sive and flux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave ? solder bath specifications, including temperature and impurities
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 36 of 45 nxp semiconductors tja1081b flexray node transceiver 13.4 reflow soldering key characteristics in reflow soldering are: ? lead-free versus snpb solderi ng; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see figure 13 ) than a snpb process, thus reducing the process window ? solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board ? reflow temperature profile; this profile includ es preheat, reflow (in which the board is heated to the peak temperature) and cooling down. it is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). in addition, the peak temperature must be low enough that the packages and/or boards are not damaged. the peak temperature of the package depends on package thickness and volume and is classified in accordance with ta b l e 1 5 and 16 moisture sensitivity precautions, as indicat ed on the packing, must be respected at all times. studies have shown that small packages reach higher temperatures during reflow soldering, see figure 13 . table 15. snpb eutectic process (from j-std-020c) package thickness (mm) package reflow temperature ( ?c) volume (mm 3 ) < 350 ? 350 < 2.5 235 220 ? 2.5 220 220 table 16. lead-free process (from j-std-020c) package thickness (mm) package reflow temperature ( ?c) volume (mm 3 ) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 37 of 45 nxp semiconductors tja1081b flexray node transceiver for further information on temperature profiles, refer to application note an10365 ?surface mount reflow soldering description? . msl: moisture sensitivity level fig 13. temperature profiles for large and small components 001aac844 temperature time minimum peak temperature = minimum soldering temperature maximum peak temperature = msl limit, damage level peak temperature
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 38 of 45 nxp semiconductors tja1081b flexray node transceiver 14. appendix: epl 3.0.1 to tj a1081b parameter conversion table 17. epl 3.0.1 to tja1081b conversion epl 3.0.1 tja1081b symbol min max unit symbol min max unit dbdrxasym - 5 ns ? t d(bus-rxd) -5ns dbdrx10 - 75 ns t d(bus-rxd) -75ns dbdrx01 - 75 ns t d(bus-rxd) -75ns dbdrxai 50 275 ns t d(busidle-rxdh) 100 275 ns dbdrxia 100 325 ns t d(busact-rxdl) 100 275 ns dbdtxasym - 4 ns ? t d(txd-bus) -4ns dbdtx10 - 75 ns t d(txd-bus) -50ns dbdtx01 - 75 ns t d(txd-bus) -50ns dbdtxai - 75 ns t d(txen-busidle) -75ns dbdtxia - 75 ns t d(txen-busact) -75ns dbustxai - 30 ns t r(dif)(bus)(data_0-idle) -30ns dbustxia - 30 ns t f(dif)(bus)(idle-data_0) -30ns dbustx01 6 18.75 ns t r(dif)(bus) 6 18.75 ns dbustx10 6 18.75 ns t f(dif)(bus) 6 18.75 ns ubdtx active 600 2000 mv v oh(dif) 900 2000 mv ubdtx idle 030mvv o(idle)(dif) ? 25 +25 mv uv dig-out-high 80 100 % v oh(rxd) v io ? 0.4 v io v uv dig-out-low -20%v ol(rxd) -0.4v uv dig-in-high -70%v ih(txen) 0.7v io 5.5 v v ih(en) 0.7v io 5.5 v v ih(stbn) 0.7v io 5.5 v v ih(bge) 0.7v io 5.5 v uv dig-in-low 30 - % v il(txen) ? 0.3 0.3v io v v il(en) ? 0.3 0.3v io v v il(stbn) ? 0.3 0.3v io v v il(bge) ? 0.3 0.3v io v udata0 ? 300 ? 150 mv v il(dif) ? 300 ? 150 mv udata1 150 300 mv v ih(dif) 150 300 mv udata1-|udata0| ? 30 ? 30 mv ? v i(dif)(h-l) ? 30 ? 30 mv dbdactivitydetection 100 250 ns t det(act)(bus) 100 200 ns dbdidledetection 50 200 ns t det(idle)(bus) 100 200 ns r cm1 , r cm2 10 40 k ? r i(bp) , r i(bm) 10 40 k ? ucm ? 10 +15 v v cm [1] ? 10 +15 v ibm gndshortmax -60ma ?i o(sc)(bm) ? -60ma ibp gndshortmax -60ma ?i o(sc)(bp) ? -60ma ibm bat48shortmax -72ma ?i o(sc)(bm) ? -72ma ibp bat48shortmax -72ma ?i o(sc)(bp) ? -72ma ibm bat27shortmax -60ma ?i o(sc)(bm) ? -60ma
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 39 of 45 nxp semiconductors tja1081b flexray node transceiver ibp bat27shortmax -60ma ?i o(sc)(bp) ? -60ma ubias - non-low-power 1800 3200 mv v o(idle)(bp) , v o(idle)(bm) [2] 1800 3150 mv ubias - low-power ? 200 +200 mv v o(idle)(bp) , v o(idle)(bm) [3] ? 0.1 +0.1 v dbdwakepulsefilter 1 500 ? st fltr(wake) 2.9 100 ? s dwu 0detect 14 ? st det(wake)data_0 14 ? s dwu idledetect 14 ? st det(wake)idle 14 ? s dwu timeout 48 140 ? st det(wake)tot 50 115 ? s uv bat-wake (v cc implemented) - 7 v v bat 4.75 60 v ubduvv bat 45.5vv uvd(vbat) 4.45 4.715 v ubduvv cc 4-vv uvd(vcc) 4.45 4.72 v dbduvv cc -1000mst det(uv)(vcc) 5100 ? s t to(uvd)(vcc) 100 670 ms ibp leak -25 ? ai li(bp) ? 5+5 ? a ibm leak -25 ? ai li(bm) ? 5+5 ? a functional class: bd voltage regulator control implemented; see section 2.5 functional class: bus driver logic level adaptation implemented; see section 2.5 functional class: bus driver - bus guardian interface implemented; see section 2.5 device qualification according to aec-q100 (rev. f) see section 2.1 t amb_class1 ? 40 +125 ?ct amb ? 40 +125 ?c dbdtxdm ? 50 +50 ns ? t d(txen-bus) ? 50 +50 ? s ibm -5vshortmax -60ma ?i o(sc)(bm) -60ma ibp -5vshortmax -60ma ?i o(sc)(bp) -60ma ibm bpshortmax -60ma ?i o(sc)(bp-bm) ? -60ma ibp bmshortmax -60ma ?i o(sc)(bm-bp) ? -60ma ibm bat60shortmax -90ma ?i o(sc)(bm) ? -72ma ibp bat60shortmax -90ma ?i o(sc)(bp) ? -72ma dbduvv bat -1000mst det(uv)(vbat) 5100 ? s uuv io 2-vv uvd(vio) 2.55 2.765 v dbduvv io -1000mst det(uv)(vio) 5100ms t to(uvd)(vio) 100 670 ? s dbdwakeupreaction local -100 ? st d(wakedet-inhh) -35 ? s t d(event-errnl) -10 ? s t d(wakedet-rxdl) -10 ? s dbdwakeupreaction remote -100 ? st d(wakedet-inhh) -35 ? s t d(wake-errn) -10 ? s t d(wakedet-rxdl) -10 ? s dbdtxactivemax 650 2600 ? st detcl(txen) 650 2600 ? s dbdmodechange - 100 ? st d(stbnx-moch) -100 ? s t d(enx-moch) -100 ? s dreactiontime errn -100 ? st d(event-errnl) -10 ? s table 17. epl 3.0.1 to tja1081b conversion ?continued epl 3.0.1 tja1081b symbol min max unit symbol min max unit
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 40 of 45 nxp semiconductors tja1081b flexray node transceiver uinh1 not_sleep uvbat ? 1 v -vv oh(inh) v bat ? 0.8 v bat v iinh1 leak -10 ? ai l(inh) ? 5+5 ? a udata0_lp ? 400 ? 100 mv v il(dif) (pins bp and bm) ? 400 ? 100 mv dwu interrupt 0.13 1 ? st sup(int)wake 130 1000 ns ubdlogic_1 - 60 % v ih(txd) 0.6v io v io + 0.3 v v ubdlogic_0 40 - % v il(txd) ? 0.3 0.4v io v dbdrv cc -10mst rec(uv)(vcc) 5100 ? s t to(uvr)(vcc) 15.2ms dbdrv bat -10mst rec(uv)(vbat) 5100 ? s t to(uvr)(vbat) 15.2ms dbdrv io -10mst rec(uv)(vio) 5100 ? s t to(uvr)(vio) 15.2ms ibp leakgnd -1600 ? ai li(bp) ? 1600 +1600 ? a ibm leakgnd -1600 ? ai li(bm) ? 1600 +1600 ? a functional class: bus driver remote wakeup implemented; see section 2.5 functional class: increased voltage amplitude transmitter implemented; see section 2.5 uesd ext 6-kv ?v esd ? : hbm on pins bp and bm to gnd 8-kv ?v esd ? : hbm on pins v bat and wake to gnd 6-kv uesd int 2-kv ?v esd ? (hbm on any other pin) 4 - kv uesd iec 6 - kv iec61000-4-2 on pins bp, bm, v bat and wake 6-kv dbdrxd r15 + dbdrxd f15 -13nst (r+f) (pin rxd; 15 pf load) - 13 ns ? dbdrxd r15 ? dbdrxd f15 ? -5ns ?? t (r-f) ? (pin rxd) - 5 ns c_bdtxd - 10 pf c i (pin txd) - 10 pf dbdtxrxai - 325 ns t d(txenh-rxdh) -325ns uv dig-out-uv -500mvv o(errn) ; with v io < v uvd(vio) -500mv v o(rxd) ; with v io < v uvd(vio) -500mv v o(rxen) ; with v io < v uvd(vio) -500mv valid operating modes when v bat ? 5.5 v; v cc = nominal (if implemented) normal, receive only, standby, sleep valid operating modes when v bat ? 7v; v cc = nominal normal, receive only, standby, sleep uv dig-out-off product specific v o(errn) [4] -0.5v v o(rxd) [4] v io ? 0.5 v io v v o(rxen) [4] v io ? 0.5 v io v r bdtransmitter product-specific z o(eq)tx 10 600 ? rxd signal sum of rise and fall time at tp4_cc -16.5nst (r+f)(rxd) (10 pf load on 50 ? ? strip; simulated) -16.5ns uv bat-wake (no v cc )-5 . 5 v v bat (operating range) 4.75 60 v table 17. epl 3.0.1 to tja1081b conversion ?continued epl 3.0.1 tja1081b symbol min max unit symbol min max unit
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 41 of 45 nxp semiconductors tja1081b flexray node transceiver [1] v cm is the bp/bm common mode voltage (v bp +v bm /2) and is specified in conditions column for v ih(dif) and v ih(dif) for pins bp and bm; see ta b l e 1 3 . v cm is tested on a receiving bus driver with a transmitting bus driver that has a ground offset voltage in the range ? 12.5 v to +12.5 v and that transmits a 50/50 pattern. [2] min: v o(idle)(bp) =v o(idle)(bm) = 0.4v cc = 0.4 ? 4.5 v = 1800 mv; max value: v o(idle)(bp) =v o(idle)(bm) = 0.6v cc = 0.6 ?? 5.25 v = 3150 mv; the nominal voltage is 2500 mv. [3] the nominal voltage is 0 mv. [4] power off. dbdrxd r25 + dbdrxd f25 -16.5nst (r+f)(rxd) (25 pf load) - 16.5 ns ? dbdrxd r25 ? dbdrxd f25 ? -5ns ? t (r-f)(rxd) ? 5+5ns dbustxdif - 3 ns ? t (r-f)(dif) (on bus) ? 3+3ns rxd signal difference of rise and fall time at tp4_cc -5ns ?? t (r-f)(rxd) ? (10 pf load on 50 ? ? strip; simulated) -5ns table 17. epl 3.0.1 to tja1081b conversion ?continued epl 3.0.1 tja1081b symbol min max unit symbol min max unit
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 42 of 45 nxp semiconductors tja1081b flexray node transceiver 15. abbreviations 16. references [1] epl ? flexray communications system electrical physical layer specification version 3.0.1, flexray consortium [2] tja108 1 ? flexray transceiver data sheet, www.nxp.com [3] tja1080a ? flexray transceiver data sheet, www.nxp.com 17. revision history table 18. abbreviations abbreviation description bss byte start sequence cdm charged device model ecu electronic control unit emc electromagnetic compatibility eme electromagnetic emission emi electromagnetic immunity esd electrostatic discharge hbm human body model mm machine model tss transmission start sequence table 19. revision history document id release date data sheet status change notice supersedes tja1081b v.1 20120604 product data sheet - -
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 43 of 45 nxp semiconductors tja1081b flexray node transceiver 18. legal information 18.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 18.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 18.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use in automotive applications ? this nxp semiconductors product has been qualified for use in automotive applications. unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
tja1081b all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 4 june 2012 44 of 45 nxp semiconductors tja1081b flexray node transceiver no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any licens e under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 18.4 licenses 18.5 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 19. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com nxp ics with flexray functionality this nxp product contains functionalit y that is compliant with the flexray specifications. these specifications and the material contained in them, as released by the flexray consortium, are for the purpose of information only. the flexray consortium and the companies that have contributed to the specifications shall not be liable for any use of the specifications. the material contained in these specific ations is protect ed by copyright and other types of intellectual property rights. the commercial exploitation of the material contained in the specifications requires a license to such intellectual property rights. these specifications may be utilized or reproduced without any modification, in any form or by any means, for informational purposes only. for any other purpose, no part of the specifications may be utilized or reproduced, in any form or by any means, without permission in writing from the publisher. the flexray specifications ha ve been developed for automotive applications only. they have neither been developed nor tested for non-automotive applications. the word flexray and the flexray logo are registered trademarks.
nxp semiconductors tja1081b flexray node transceiver ? nxp b.v. 2012. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 4 june 2012 document identifier: tja1081b please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 20. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 2.1 optimized for time triggered communication systems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2.2 low-power management . . . . . . . . . . . . . . . . . 2 2.3 diagnosis (detection and signaling) . . . . . . . . . 2 2.4 protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2.5 functional classes according to flexray electrical physical layer specification (see ref. 1 ). . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 pinning information . . . . . . . . . . . . . . . . . . . . . . 4 5.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 5.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 6 functional description . . . . . . . . . . . . . . . . . . . 5 6.1 operating modes . . . . . . . . . . . . . . . . . . . . . . . 5 6.1.1 bus activity and idle detection . . . . . . . . . . . . . 5 6.1.2 signaling on pin errn . . . . . . . . . . . . . . . . . . . 6 6.1.3 signaling on pins rxen and rxd . . . . . . . . . . 7 6.1.4 operating mode transitions . . . . . . . . . . . . . . . 8 6.1.5 normal mode . . . . . . . . . . . . . . . . . . . . . . . . . 13 6.1.6 receive-only mode . . . . . . . . . . . . . . . . . . . . . 13 6.1.7 standby mode. . . . . . . . . . . . . . . . . . . . . . . . . 13 6.1.8 go-to-sleep mode . . . . . . . . . . . . . . . . . . . . . . 13 6.1.9 sleep mode . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6.2 wake-up mechanism . . . . . . . . . . . . . . . . . . . 14 6.2.1 remote wake-up . . . . . . . . . . . . . . . . . . . . . . 14 6.2.1.1 bus wake-up via wake-up pattern. . . . . . . . . . 14 6.2.1.2 bus wake-up vi a dedicated flexray data frame . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6.2.2 local wake-up via pin wake . . . . . . . . . . . . . 15 6.3 fail-silent behavior . . . . . . . . . . . . . . . . . . . . . 16 6.3.1 v bat undervoltage . . . . . . . . . . . . . . . . . . . . . 16 6.3.2 v cc undervoltage . . . . . . . . . . . . . . . . . . . . . . 16 6.3.3 v io undervoltage. . . . . . . . . . . . . . . . . . . . . . . 16 6.4 flags. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6.4.1 local wake-up source flag . . . . . . . . . . . . . . . 16 6.4.2 remote wake-up source flag . . . . . . . . . . . . . 16 6.4.3 wake flag . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.4.4 power-on flag . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.4.5 temperature medium flag . . . . . . . . . . . . . . . . 17 6.4.6 temperature high flag . . . . . . . . . . . . . . . . . . . 17 6.4.7 txen clamped flag. . . . . . . . . . . . . . . . . . . . . 17 6.4.8 bus error flag . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.4.9 uv vbat flag . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.4.10 uv vcc flag . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.4.11 uv vio flag. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6.5 status register . . . . . . . . . . . . . . . . . . . . . . . . 18 7 limiting values . . . . . . . . . . . . . . . . . . . . . . . . 20 8 thermal characteristics . . . . . . . . . . . . . . . . . 21 9 static characteristics . . . . . . . . . . . . . . . . . . . 21 10 dynamic characteristics. . . . . . . . . . . . . . . . . 27 11 test information . . . . . . . . . . . . . . . . . . . . . . . 33 12 package outline. . . . . . . . . . . . . . . . . . . . . . . . 34 13 soldering of smd packages . . . . . . . . . . . . . . 35 13.1 introduction to soldering. . . . . . . . . . . . . . . . . 35 13.2 wave and reflow soldering. . . . . . . . . . . . . . . 35 13.3 wave soldering . . . . . . . . . . . . . . . . . . . . . . . 35 13.4 reflow soldering . . . . . . . . . . . . . . . . . . . . . . 36 14 appendix: epl 3.0.1 to tja1081b parameter conversion . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 15 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 42 16 references. . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 17 revision history . . . . . . . . . . . . . . . . . . . . . . . 42 18 legal information . . . . . . . . . . . . . . . . . . . . . . 43 18.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 43 18.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 18.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . 43 18.4 licenses. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 18.5 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 44 19 contact information . . . . . . . . . . . . . . . . . . . . 44 20 contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

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